Band offset measurements of ZnO∕6H-SiC heterostructure system

Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN struc...

Heterojunction band offset engineering

Control of band discontinuities in semiconductor heterostructures may introduce a new important degree of freedom in the design of heterojunction devices and allow independent optimization of carrier injection, carrier confinement and ionization thresholds in high speed and optoelectronic devices. We will review recently proposed methods to microscopically control heterojunction parameters by m...

Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application

AIGaN-GaN heterostructure FETs with offset gate design

and test fucture. The light generated by a high speed 800nm wavelength transmitter was coupled to the detectors using a singlemode fibre. The level of optical power was adjusted by a variable optical attenuator. Fig. 3 shows the eye diagram of a 2.4Gbit/s input current to the laser transmitter and the received eye diagram at 1V9 error rate. The bit error rate (BER) has been measured against inc...

Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy

Pure aluminum oxide (Al2O3) and zinc aluminum oxide (Zn x Al1-x O) thin films were deposited by atomic layer deposition (ALD). The microstructure and optical band gaps (E g ) of the Zn x Al1-x O (0.2 ≤ x ≤ 1) films were studied by X-ray diffractometer and Tauc method. The band offsets and alignment of atomic-layer-deposited Al2O3/Zn0.8Al0.2O heterojunction were investigated in detail using char...